1 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol n - channel p - channel units drain - source voltage v d s 30 - 30 v gate - source voltage v gs 20 20 v t c = 25 c 4 - 3 continuous drain current t c = 70 c i d 3 - 2 pulsed drain current 1 i dm 10 - 10 a t c = 25 c 2 power dissipation t c = 70 c p d 1 . 3 w junction & storage temperature range t j , t stg - 55 to 150 lead temperature ( 1 / 16 ? from case for 10 sec.) t l 275 c thermal resistance rati ngs thermal resistance symbol typical maximum units junction - to - ambient r q ja 110 c / w 1 pulse width limited by maximum junction temperature. 2 duty cycle 1 % g : gate d : drain s : source product summary v (br)dss r ds(on) i d n - channel 30 65m [ 4a p - channel - 30 150m [ - 3a
2 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem electrical characteristics (t c = 25 c, unless otherwise noted) limits unit parameter symbol test conditions min typ max static v gs = 0v, i d = 250 m a drain - source breakdown voltage v (br)dss v gs = 0v, i d = - 250 m a n - ch p - ch 30 - 30 v ds = v gs , i d = 250 m a gate threshold voltage v gs(th) v ds = v gs , i d = - 250 m a n - ch p - ch 0.9 - 0.9 1.5 - 1.5 2.5 - 2.5 v v ds = 0v, v gs = 20v gate - body leakage i gss v ds = 0v, v gs = 20v n - ch p - ch 100 100 na v ds = 24v, v gs = 0v v ds = - 24v, v gs = 0v n - ch p - ch 1 - 1 v ds = 20v, v gs = 0v , t j = 55 c zero gate voltage drain current i dss v ds = - 20v, v gs = 0v, t j = 55 c n - ch p - ch 10 - 10 m a v ds = 5v, v gs = 10v on - state drain current 1 i d(on) v ds = - 5v, v gs = - 10v n - ch p - ch 10 - 10 a v gs = 4.5v, i d = 3a v gs = - 4.5v, i d = - 2a n - ch p - ch 72 170 120 250 v gs = 10v, i d = 4a drain - source on - state resistance 1 r ds(on) v gs = - 10v, i d = - 3a n - ch p - ch 48 100 65 150 m [ v ds = 10v, i d = 3a forward transconductance 1 g fs v ds = - 10v, i d = - 2a n - ch p - ch 6 3 s dynamic total gate charge 2 q g n - ch p - ch 5 5.5 7.5 6.6 gate - source charge 2 q gs n - ch p - ch 0.8 1.2 gate - drain charge 2 q gd n - channe l v ds = 0.5v (br)dss , v gs = 10v, i d = 3a p - channel v ds = 0.5v (br)dss , v gs = - 10v, i d = - 2a n - ch p - ch 1.0 0.9 nc
3 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem turn - on delay time 2 t d(on) n - ch p - ch 7 8 11 12 rise time 2 t r n - ch p - ch 12 11 18 18 turn - off delay time 2 t d(off) n - ch p - ch 12 14 18 21 fall time 2 t f n - channel v ds = 15v, r l = 15 [ i d @ 1a, v gs = 10v, r gen = 6 [ p - channel v ds = - 15v, r l = 15 [ i d @ - 1a, v gs = - 10v, r gen = 6 [ n - ch p - ch 7 8 11 12 ns sou rce - drain diode ratings and characteristics (t c = 25 c) i f = 0.9a, v gs = 0v forward voltage 1 v sd i f = - 0.9a, v gs = 0v n - ch p - ch 1.2 - 1.2 v i f = 0.9a, dl f /dt = 100a / m s reverse recovery time t rr i f = - 0.9a, dl f /d t = 100a / m s n - ch p - ch 40 40 80 80 ns 1 pulse test : pulse width 300 m s ec, duty cycle 2 % . 2 independent of operating temperature. 3 pulse width limited by maximum junction temperature. remark: this product marked with ? 5 0 yww ? orders for parts with lead - free plating can be placed using the pxxxxxx g parts name. 50yww marking description: 5 - n+p mosfet 0 - serial number y - year w - week
4 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem n - channel
5 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem
6 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem p - channel
7 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem
8 mar - 18 - 200 5 n - & p - channel enhancement mode field effect transistor p 6 503nj g tsopjw - 8 lead - free niko - sem tsopjw - 8 mechanical data c b a d g f e i h j l m k mm mm dimension min. typ. max. dimension min. typ. max. a 2.95 3.05 3.10 h 0.30 0.45 0.60 b 2.30 2.40 2.50 i c 2.65 2.85 3.05 j 7 nom d 0.25 0.32 0.40 k 0.04 ref. e 0.65bsc l 0.1 0.15 0.20 f 0.925 1.00 m g 0.01 0.1 n
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